کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10642422 | 997657 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The polaron effect on the binding energy of a shallow donor impurity in quantum-well wires in an electric field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Using a variational technique, the effect of electron-longitudinal optical (LO) phonon interaction on the ground and the first few excited states of a hydrogenic impurity in a semiconductor quantum wire of rectangular cross section under an external electric field is studied theoretically for the impurity atom doped at various positions. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied uniform electric field and the position of the impurity. It is found that the presence of optical phonons changes significantly the values of the impurity binding energies of the system. Taking into account the electron-LO phonon interaction the 1sâ2py and 1sâ2pz transition energies are calculated as a function of applied electric field for different impurity positions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issue 4, May 2005, Pages 447-456
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issue 4, May 2005, Pages 447-456
نویسندگان
Arshak L. Vartanian, Mkrtich A. Yeranosyan, Albert A. Kirakosyan,