کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10643584 | 998816 | 2005 | 37 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InN, latest development and a review of the band-gap controversy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Following a short history of its development, the latest advances in the physics of InN and the arguments surrounding the band-gap controversy are critically reviewed. The role of oxygen in the material is examined, with new absorption data presented for the amorphous oxynitride contribution. Assumptions regarding oxygen alloying are dispelled. The recent evidence for a 1.1-1.5 eV band-gap is examined, as well as evidence for the possibility of a â¼0.7Â eV trapping centre. Data for the newly discovered nitrogen:InN alloy system, extending out to levels of 33% excess nitrogen, are discussed, as are current techniques for stoichiometry analysis. Finally it is concluded that the current analysis of InN is not yet sufficient to ascribe a known band-gap to the material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 38, Issue 1, July 2005, Pages 1-37
Journal: Superlattices and Microstructures - Volume 38, Issue 1, July 2005, Pages 1-37
نویسندگان
K.S.A. Butcher, T.L. Tansley,