کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10643686 | 998857 | 2005 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantum cascade laser gain medium modeling using a second-nearest-neighbor sp3sâ tight-binding model
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Quantum cascade laser gain medium modeling using a second-nearest-neighbor sp3sâ tight-binding model Quantum cascade laser gain medium modeling using a second-nearest-neighbor sp3sâ tight-binding model](/preview/png/10643686.png)
چکیده انگلیسی
A ten-band sp3sâ second-nearest-neighbor tight-binding model has been used to model the electronic structure of various AlxGa1âxAs quantum cascade laser gain media. The results of the calculations have been compared with experimental emission wavelength data, and it has been shown that the model predicts the photon energies at the peaks in the gain coefficient spectra agreeing, on average, to within 4 meV of the experimental values. Comparison of the results of the calculations with results from a two-band kââ
pâ model shows that the tight-binding model is able to find the X-like states simultaneously with the Î-like states. These X-like states were found to be strongly localized within the barriers. Finally, the model has also been applied to InAs/AlSb and InAs/AlSb/GaSb QCLs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 37, Issue 6, June 2005, Pages 410-424
Journal: Superlattices and Microstructures - Volume 37, Issue 6, June 2005, Pages 410-424
نویسندگان
Jeremy Green, Timothy B. Boykin, Corrie D. Farmer, Michel Garcia, Charles N. Ironside, Gerhard Klimeck, Roger Lake, Colin R. Stanley,