The influence of interdiffusion on the binding energy of excitons in InxGa1−xNyAs1−y /GaAs quantum wells

The influence of a technologically important effect of interdiffusion of atoms between well and barrier layers on the ground state exciton binding energy has been investigated as a function of the well width, for different quaternary material compositions. The migration of the group III atoms through the quantum well interfaces has been assumed to be dominant. Significant changes of the exciton binding energy depending on the diffusion length have been observed.