Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

► InGaN quantum dots were grown on GaN by metalorganic vapor phase epitaxy. ► Quantum dots density, average height and diameter were ∼1010 cm−2, 4 and 40 nm. ► Quantum dots are formed according to the Stranski-Krastanov growth mode. ► Critical layer thickness for this transition at 675 °C with 22% In was ∼4 nm. ► Strong green emission at around 530 nm was realised from the InGaN/GaN stacks.