Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials

► We have shown that epitaxial film morphology depends on material, surface orientation and process conditions. ► Deposition kinetics depends on surface orientation. ► The kinetics anisotropy is based on dangling bond density and surface structure. ► SiGe material is more impacted by the kinetics anisotropy than that Si material. ► For SiGe material, kinetics anisotropy is supposed to have other contributions such as growth mode and germanium mixing considerations.