Area selective epitaxy of InAs on GaAs(0Â 0Â 1) and GaAs(1Â 1Â 1)A by migration enhanced epitaxy

Area selective epitaxy of InAs on semi-insulating GaAs(0 0 1) and GaAs(1 1 1)A substrates masked by SiO2 has been investigated by using migration enhanced epitaxy (MEE). Successful area selective epitaxy has been achieved in an optimized substrate temperature range 460°C