کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707196 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth temperature dependence of strain relaxation during InGaAs/GaAs(0Â 0Â 1) heteroepitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth temperature dependence of strain relaxation during InGaAs/GaAs(0Â 0Â 1) heteroepitaxy Growth temperature dependence of strain relaxation during InGaAs/GaAs(0Â 0Â 1) heteroepitaxy](/preview/png/10707196.png)
چکیده انگلیسی
Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(0 0 1) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 °C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 13-16
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 13-16
نویسندگان
Takuo Sasaki, Hidetoshi Suzuki, Akihisa Sai, Masamitu Takahasi, Seiji Fujikawa, Itaru Kamiya, Yoshio Ohshita, Masafumi Yamaguchi,