کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707227 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(0Â 0Â 1) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Silicon doped cubic GaN (c-GaN) films were grown on MgO (0Â 0Â 1) substrates by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). And the incorporation of hexagonal phase into cubic AlGaN (c-AlGaN) films was examined. The conduction type of the Si doped c-GaN and c-AlGaN films was n-type. The maximum electron concentration was 2.8Ã1020Â cmâ3 for c-GaN and 1.3Ã1020Â cmâ3 for c-AlGaN (Al content of 7-10% and hexagonal phase of about 30%). The cubic phase purity of the films was maintained near the value of undoped films of the same Al content. The maximum electron mobility was 27Â cm2/VÂ s for c-GaN and electron mobility decreased as the cubic phase purity of the film decreases. The main cause of electron scattering is the stacking faults associated with the hexagonal phase incorporation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 91-94
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 91-94
نویسندگان
M. Kakuda, S. Kuboya, K. Onabe,