کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707232 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The growth and bonding chemistry at a gate dielectric Ga2O3/GaAs interface is investigated using in-situ photoemission techniques. A multi-chamber molecular beam epitaxy/analysis system allows for the controlled deposition of III-V and oxide layers and the probing of these layers without exposure to atmosphere. The growth of Ga2O3 on a (2Ã4) reconstructed GaAs surface proceeds with molecules of Ga2O insertion into pairs of As-dimers with the surface void of As-O bonding. Subsequent growth involved the combination of Ga2O with oxygen to form Ga2O3. However, for stoichiometric Ga2O3, the substrate temperature >440 °C is required to provide the necessary energy for the reaction. This growth process is unique and represents a method for unpinning the Fermi level for GaAs with a low level of interface state density required for the fabrication of enhancement mode MOSFET devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 103-106
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 103-106
نویسندگان
W. Priyantha, G. Radhakrishnan, R. Droopad, M. Passlack,