کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707337 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the reflection high energy electron diffraction of the transition from a two-dimensional growth mode to a three-dimensional growth mode of InP ring-shaped quantum-dot molecule (QDM) formation in the matrices of In0.5Ga0.5P on semi-insulating GaAs(0Â 0Â 1) substrates was reported. All samples were grown by solid-source molecular beam epitaxy using the droplet epitaxy technique under different crystallization temperature conditions. The surface morphologies of InP ring-shaped QDMs were examined by atomic force microscopy and the photoluminescence (PL) spectra were obtained by the 478Â nm line of an Ar+ laser with an InGaAs detector. The dependence of the PL ground-state peak energies as the function of power and temperature with the tendencies of PL peak and full width at half maximum were investigated and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 275-278
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 275-278
نویسندگان
Wipakorn Jevasuwan, Poonyasiri Boonpeng, Supachok Thainoi, Somsak Panyakeow, Somchai Ratanathammaphan,