Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Characterization; A1. Crystal structure; A3.Chemical vapor deposition processes; B1. Nitrides; B2. Dielectric materials;
مقالات ISI A1 ساختارهای کم حجم (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III-V materials; B2. Quantum dots; B3. Heterojunction semiconductor devices; Molecular beam epitaxy; Heterostructure; Quantum dot; Spin; Nuclear spin; Qu
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Epitaxy; A1. Defects;
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Molecular Beam Epitaxy; A3. Selective epitaxy; B2. Semiconducting III-V materials;
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A2. Growth from vapor; B1. Metals; B1. Nanomaterials;
Keywords: A1 ساختارهای کم حجم; A1. Characterization; A1. Low dimensional structures; B1. Nitrides; B1. Graphene; B1. Bismuth compounds;
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. MOVPE; A3. InGaN/GaN quantum wells; B2. Luminescent defect band;
Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition
Keywords: A1 ساختارهای کم حجم; A3. Chemical vapor deposition processes; B1. Niobium (II) sulfide; A1. 2D materials; A1. Low dimensional structures;
Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Quantum wells; B2. Semiconducting germanium; B2. Semiconducting silicon compounds;
Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy
Keywords: A1 ساختارهای کم حجم; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide; A1. Low dimensional structures;
InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. MOVPE; A3. InAs/GaSb composite quantum wells; B2. AlSb;
Microstructure, growth mechanism and anisotropic resistivity of quasi-one-dimensional ZrTe5 crystal
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Low dimensional structures; A2. Growth from vapor; A2. Single crystal growth; A3. Chemical vapor transport processes;
Infiltration of CdTe nano crystals into a ZnO wire vertical matrix by using the isothermal closed space technique
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A2. Hydrothermal crystal grown; A3. Physical vapor deposition processes; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Effect of Fe-substitution on the structure and magnetism of single crystals Mn2-xFexBO4
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Crystal structure; A2. Single crystal growth; B1. Borates; B2. Magnetic materials;
Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source
Keywords: A1 ساختارهای کم حجم; A1. Characterization; A1. Low dimensional structures; A1. Nanostructure; A1. Phase diagrams; A3. Liquid phase epitaxy; B1. Nanomaterials;
Synthesis and characteristics of layered SnS2 nanostructures via hot injection method
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Crystal morphology; A1. X-ray diffraction; A2. Single crystal growth; B1. Nanomaterials; B1. Sulfides;
Ge dots formation using Si(100)-c(4×4) surface reconstruction
Keywords: A1 ساختارهای کم حجم; A1. Nanostructures; A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting germanium
Growth and characterization of large weak topological insulator Bi2TeI single crystal by Bismuth self-flux method
Keywords: A1 ساختارهای کم حجم; A1. Characterization; A1. Low dimensional structures; A2. Single crystal growth; B1. Inorganic compounds
Germanium-catalyzed growth of single-crystal GaN nanowires
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Nanostructures; A2. Single crystal growth; A3. Chemical vapor deposition processes; B1. Nitrides;
High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A2. Growth from vapor; A2. High-pressure melt growth; B2. Semiconducting materials
MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators
Keywords: A1 ساختارهای کم حجم; A1. Interfaces; A1. Low dimensional structures; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting II-VI materials;
Inclusion of CdS quantum DoT into beta-cyclodextrin crystal by simple rapid crystallization
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Nucleation; A2. Growth from solution; B1. Oxides
Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top
Keywords: A1 ساختارهای کم حجم; A1. Nanostructures; A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting germanium;
In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Stresses; A3. Selective epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials
Growth of InAs nanowires with the morphology and crystal structure controlled by carrier gas flow rate
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Low dimensional structures; A1. Nanostructures; A2. Growth from vapor; B1. Nanomaterials; B2. Semiconducting III–V material
Morphology evolution of MoS2 nanorods grown by chemical vapor deposition
Keywords: A1 ساختارهای کم حجم; A1. Nanostructures; A1. Low dimensional structures; A2. Growth from vapor; A2. Chemical vapor deposition processes;
Single crystal growth and characterization of kagomé-lattice shandites Co3Sn2−xInxS2
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. X-ray diffraction; A1. Single crystal growth; B1. Sulfides; B2. Magnetic materials.
Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials;
Gallium nitride porous microtubules self-assembled from wurtzite nanorods
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Growth models; A1. Low dimensional structures; A1. Nanostructures; B2. Semiconducting III-V materials;
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Analyzing capture zone distributions (CZD) in growth: Theory and applications
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Growth models; A1. Low dimensional structures; A1. Surface structure; A2. Single crystal growth
Interface effect on structural and optical properties of type II InAs/GaSb superlattices
Keywords: A1 ساختارهای کم حجم; A1. Interface; A1. Low dimensional structures; A1. Stresses; A3. Molecular beam epitaxy; B1. Antimonides
KMC simulation of growth and equilibration of V-shaped patterned crystal surface via step motion
Keywords: A1 ساختارهای کم حجم; A1. Computer simulation; A1. Crystal morphology; A1. Diffusion; A1. Low dimensional structures; A1. Nucleation; A2. Growth from vapor;
Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
Keywords: A1 ساختارهای کم حجم; A1. Transmission electron microscopy; A1. Low dimensional structures; A3. Liquid phase epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B3. Semiconducting indium compounds;
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE)
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Nanostructures; A1. Growth models; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium arsenide;
Self-assembly of Ga droplets attached to GaAs quantum dots
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Carrier dynamics and activation energy of CdTe/ZnTe nanostructures with different CdTe thicknesses
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Nanostructures; A3. Atomic layer epitaxy; A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
Keywords: A1 ساختارهای کم حجم; A1. Etching; A1. Low dimensional structures; A1. Nanostructures; A1. Optical microscopy; A3. Molecular beam epitaxy; B1. Nitrides
Intrinsic growth of layered structure GaS microtubes from banana-leaf like structures
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Low dimensional structures; A1. Morphological stability; A2. Physical vapor deposition processes; B1. Sulfides; B2. Semiconducting gallium compounds;
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Keywords: A1 ساختارهای کم حجم; A1. Diffusion; A1. Low dimensional structures; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Inclusion of inorganic polyoxomolybdate molecules into β-cyclodextrin: By slow crystallization or rapid crystallization
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Nucleation; A2. Growth from solution; B1. Oxides
Theory of controllable shape of quantum structures upon droplet epitaxy
Keywords: A1 ساختارهای کم حجم; A1. Diffusion; A1. Growth modelss; A1. Low dimensional structures; A1. Surface processe; A3. Liquid phase epitaxy; B2. Semiconducting III–V materials
Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Nucleation; A3. Chemical beam epitaxy; A1. Quantum dots; InAs quantum dots;
Hydrothermal synthesis of Mn(OH)O nanowires and their thermal conversion to (1D)-manganese oxides nanostructures
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Hydrothermal process; A1. Low dimensional structures; A3. Thermal conversion; B1. Manganese oxides; B1. Nanomaterials
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials
Growth of SiC whiskers from hydrogen silicone oil
Keywords: A1 ساختارهای کم حجم; A1. β-SiC whisker; A1. Core–shell; A1. Low dimensional structures; A3. Formation mechanism; B1. Low-cost raw material; B2. Reinforcement materials
Morphology and crystal phase evolution of GeO2 in liquid phase deposition process
Keywords: A1 ساختارهای کم حجم; A1. Crystal morphology; A1. Low dimensional structures; A2. Growth from solutions; B1. Inorganic compounds; B1. Oxides; B2. Dielectric materials;
Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Self-catalyzed; B2. Semiconducting gallium arsenide
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A1. Photoluminescence; A1. Electroluminescence; A3. Low-pressure metalorganic vapor phase epitaxy; A3. InAs/GaAs quantum dots; B2. Semiconducting III–V materials
InP/AlGaInP quantum dot laser emitting at 638 nm
Keywords: A1 ساختارهای کم حجم; A1. Low dimensional structures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting indium phosphide; B3. Solid state lasers