کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789651 1524389 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of large weak topological insulator Bi2TeI single crystal by Bismuth self-flux method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and characterization of large weak topological insulator Bi2TeI single crystal by Bismuth self-flux method
چکیده انگلیسی


• Single crystal growth of weak topological insulator Bi2TeI compound.
• Study on the X-ray diffraction of Bi2TeI single crystal.
• Transport properties of Bi2TeI crystal (4-probe/Hall effect measurements).

Two dimensional (2D) topological insulators (TIs) with a quantum spin Hall (QSH) effect feature edge states (ESs) that are topologically protected from backscattering. Bi2TeI with 2D Bismuth bilayer is one of the representative compounds of weak topological insulator. However, nobody has prepared a high quality single crystal with a millimeter size so far. Here, we have successfully synthesized a large single crystal sized up to “millimeter (~5×5 mm2)” using the Bismuth self-flux method. And we also found its giant anisotropy transport behavior in Bi2TeI of a 2D TI constructed from nontrivial Bi bilayers (Quantum Spin Hall phase) capped by a trivial Te–Bi–I layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 440, 15 April 2016, Pages 26–30
نویسندگان
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