کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789713 1524390 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Germanium-catalyzed growth of single-crystal GaN nanowires
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Germanium-catalyzed growth of single-crystal GaN nanowires
چکیده انگلیسی
We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor-Liquid-Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 439, 1 April 2016, Pages 28-32
نویسندگان
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