کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707359 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1Â 1Â 1)Si substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
For application in novel opto-electronic nanowire devices, Ga-assisted GaAs/InxGa1âxAs axial heterostructure nanowires grown on a (1Â 1Â 1)Si substrate at a high In/Ga flux ratio were investigated. The increased diameter of the InxGa1âxAs region of the nanowire was observed from a scanning electron microscopy image. The In composition of 0.01-0.02 of the InxGa1âxAs was shown by EDX point analysis. The In concentration of 0.62 of an In-Ga alloy droplet was estimated from the diameter ratio of the InxGa1âxAs/GaAs region. From these results, it was considered that the excess In was collected in the droplet, resulting in an increased nanowire diameter. The increased diameter of the InxGa1âxAs region was also discussed together with the results of thermodynamic calculation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 315-318
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 315-318
نویسندگان
Jihyun Paek, Masahito Yamaguchi, Hiroshi Amano,