Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications

We have observed room temperature (RT) electrical spin injection in an InAs quantum dot (QD) light emitting diode (LED) grown on a p-type GaAs substrate from a ferromagnetic Fe/Tb electrode with strong out-of-plane anisotropy in remanence, i.e. without applied magnetic field. The QDs in the LED emit at 1275 nm (ground state luminescence), which is beyond the range for highly sensitive detectors, and therefore not optimum for various applications, e.g. quantum information studies. We will present two different ways to blue-shift the emission wavelength and discuss the advantages and drawbacks of the experiments.