کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707498 | 1023647 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermodynamic analysis on HVPE growth of InGaN ternary alloy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermodynamic analysis on HVPE growth of InGaN ternary alloy Thermodynamic analysis on HVPE growth of InGaN ternary alloy](/preview/png/10707498.png)
چکیده انگلیسی
Growth of InGaN alloy using hydride vapor phase epitaxy (HVPE) was investigated. Thermodynamic analysis was performed, taking account of the source zones. It was found that InCl3 and GaCl3, which are known to be essential for appreciable InGaN growth by HVPE, could be generated preferentially at the source zone by using a group-III metal and Cl2 gas. The analysis for the growth zone revealed that a significantly large driving force for both InN and GaN deposition is possible. The calculated vapor-solid distribution was close to a linear relationship by using a high V/III ratio, inert carrier gas, and high temperature. These facts suggest that an InGaN thick layer can be grown with a high growth rate and enough controllability of solid composition by employing InCl3 and GaCl3 precursors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 441-445
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 441-445
نویسندگان
Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu,