کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707599 | 1023760 | 2005 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of thick GaN layers with hydride vapour phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper we describe recent experimental efforts to produce high quality thick (⩾300 μm) GaN layers on sapphire, the removal of such a layer from the sapphire substrate, and the properties of the so obtained free-standing GaN material. The growth process is described in some detail in the vertical reactor geometry used in this work. Defects like dislocations, micro-cracks and pits produced during growth are discussed, along with procedures to minimize their concentration on the growing surface. The laser lift-off technique is shown to be a feasible technology, in particular if a powerful laser with a large spot size can be used. A major problem with the free-standing material is the typically large bowing of such a wafer, due to the built in defect concentrations near the former GaN-sapphire interface. This bowing typically causes a rather large width of the XRD rocking curve of the free-standing material, while optical data confirm virtually strain free material of excellent quality at the top surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 17-31
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 17-31
نویسندگان
B. Monemar, H. Larsson, C. Hemmingsson, I.G. Ivanov, D. Gogova,