کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707632 | 1023760 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight](/preview/png/10707632.png)
چکیده انگلیسی
Native GaN and AlN substrates cut out of single-crystal boules provide threading dislocations in on-grown III-nitride materials with the density much lower than that observed in structures on conventional sapphire or SiC wafers. The native substrates are also expected to enable an easy choice of growth surface orientation that controls the crystal polarity and, hence, the distribution of polarization charges in a nitride heterostructure. The impact of these factors on the bandgap engineering of advanced electronic and optoelectronic devices is discussed in this paper in terms of numerical simulation with the focus on high-electron mobility transistors and light-emitting diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 115-124
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 115-124
نویسندگان
V.F. Mymrin, K.A. Bulashevich, N.I. Podolskaya, S.Yu. Karpov,