کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707740 | 1023779 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and study of stoichiometric ZnO by MOCVD technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>104 Ω cm) was higher than that in 500 °C (3.48Ã103 Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issue 4, 15 December 2005, Pages 521-526
Journal: Journal of Crystal Growth - Volume 285, Issue 4, 15 December 2005, Pages 521-526
نویسندگان
Xinsheng Wang, Tianpeng Yang, Guotong Du, Hongwei Liang, Yuchun Chang, Weifeng Liu, Yibin Xu,