کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11003595 | 1461359 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films](/preview/png/11003595.png)
چکیده انگلیسی
We investigated the effects of hydrogen annealing temperature on Pt/HfOx/Pt resistive switching memory devices. Memory devices annealed in a hydrogen environment exhibited unipolar resistive switching behaviors with low set, reset, and forming voltages owing to reduction of the HfOx film by the injected hydrogen. The devices annealed at 400â¯Â°C exhibited good endurance, lasting 7 times as long as non-annealed device. This improvement could be attributed to the generation of more oxygen vacancies in HfOx, which resulted in more conducting pathways forming during the resistive switching process. The devices annealed in the hydrogen environment also showed longer retention times than those of non-annealed devices. Therefore, hydrogen annealing improves the performance of this nonvolatile switching memory by enabling low power operation at lower operation voltages with greater reliability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 207-213
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 207-213
نویسندگان
Yong Chan Jung, Sejong Seong, Taehoon Lee, Seon Yong Kim, In-Sung Park, Jinho Ahn,