کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
11008949 1840427 2018 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application
چکیده انگلیسی
The characteristics of GaN Schottky barrier diodes fabricated with TiN and Ni anodes were evaluated in the temperature range from 25 to 175 °C. The Schottky barrier height (ideality factor) increases (decreases) with increasing temperature for both kinds of diodes owing to the barrier height being nonhomogeneous. The GaN diode with TiN anode presents better interface quality and thermal stability is adopted for temperature sensing application. It demonstrated that the sensitivity of the TiN diode is approximately 1 mV/K and varies only slightly for all current levels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 274-279
نویسندگان
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