Reply to the “comments on -a theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application”

In this paper, a reply to a to a recent article entitled “Comments on A-theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application” is given which opines that the functional form of built-in-potential of a metal-semiconductor junction is considered erroneously in the original publication. On the contrary to the comment, this article justifies the original work with suitable logic and supportive references.