کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11015780 | 1781703 | 2019 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
From random stacking faults to polytypes: A 12-layer NiSn4 polytype
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
NiSn4 grows in diffusion couples (Ni plates with electrodeposited Sn) in a temperature range from room temperature up to 353â¯K. Previously, the crystal structure of NiSn4 grown at ambient temperature was identified to be an intermediate stacking variant between the orthorhombic PtSn4-type and the tetragonal β-IrSn4-type structure, with a slight tendency towards the tetragonal type (Schimpf et al., Mater. Design 109 (2016) 324-333). Now it is reported that NiSn4 forming at 333â¯K and above, exhibits a 12-layer polytype (space group P42/nbc, aâ¯=â¯bâ¯=â¯6.250â¯Ã
, câ¯=â¯69.00â¯Ã
) due to ordered incorporation of stacking faults into the structure. This NiSn4 structure was derived by comparison of its diffraction patterns with those of the exhaustively generated NiSn4 polytypes. First-principles calculations on a series of selected NiSn4 polytypes demonstrate that the experimentally observed polytype is energetically favoured as compared to others.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 774, 5 February 2019, Pages 265-273
Journal: Journal of Alloys and Compounds - Volume 774, 5 February 2019, Pages 265-273
نویسندگان
A. Leineweber, C. Wolf, P. Kalanke, C. Schimpf, H. Becker, S.L. Shang, Z.K. Liu,