کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1278836 | 1497630 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Some physical properties of ZnO thin films prepared by RF sputtering technique
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Some physical properties of ZnO thin films prepared by RF sputtering technique Some physical properties of ZnO thin films prepared by RF sputtering technique](/preview/png/1278836.png)
چکیده انگلیسی
ZnO thin films were deposited with RF sputtering using pure Zn target. In order to generate oxidation process of Zn, Ar:O2 gas mixing in (9:1), (7:3) and (5:5) ratios of Ar:O2 was used. To characterize ZnO thin films thickness and transparency were measured using optical method, and refractive index and band gap energies were calculated. Electrical conductivity of the ZnO thin films was also determined. AFM images were used to determine surface morphology of produced ZnO thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 34, Issue 12, June 2009, Pages 5218–5222
Journal: International Journal of Hydrogen Energy - Volume 34, Issue 12, June 2009, Pages 5218–5222
نویسندگان
N. Ekem, S. Korkmaz, S. Pat, M.Z. Balbag, E.N. Cetin, M. Ozmumcu,