کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1329877 | 1500104 | 2014 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Syntheses, structures, and optical properties of the indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4 Syntheses, structures, and optical properties of the indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4](/preview/png/1329877.png)
• The solid-state In/Ge selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized.
• Both Cs4In8GeSe16 and CsInGeSe4 display In/Ge disorder.
• Cs4In8GeSe16 and CsInGeSe4 have band gaps of 2.20 eV and 2.32 eV, respectively.
The three solid-state indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe4 display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.
Structure of Cs4In8GeSe16Figure optionsDownload as PowerPoint slide
Journal: Journal of Solid State Chemistry - Volume 212, April 2014, Pages 191–196