Defect structure of Sb2−xMnxTe3 single crystals

Incorporation of the transition metal elements in the tetradymite structure of Sb2Te3 has a strong influence on electronic properties. Recent studies have indicated that Mn substitutes on the Sb sublattice increases the carrier concentration of holes. However, the doping efficiency of Mn appears rather low in comparison to what it should be based on the measurements of magnetization, structural analysis, and transport properties. In this paper we address this issue by making detailed studies of the Hall effect and electrical resistivity and we explain the results with the aid of a model that takes into account interactions of the Mn impurity with the native defects in antimony telluride. Specifically, we find that Mn atoms interact with antisite defects (antimony atoms located on the tellurium sublattice), a process that decreases the density of antisite centers and generates free electrons. These, in turn, recombine with holes and thus decrease their concentration and the apparent Mn doping efficiency.

Temperature dependence of the electrical resistivity ρ⊥c of Sb2−xMnxTe3 single crystals (samples are labeled according to Table 1).Figure optionsDownload as PowerPoint slide