کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1330880 | 978981 | 2010 | 7 صفحه PDF | دانلود رایگان |

Epitaxial growth and electron doping of 12CaO·7Al2O3 (C12A7) and 12SrO·7Al2O3 (S12A7) are reported. The C12A7 films were prepared on Y3Al5O12 (YAG) single-crystal substrates by pulsed laser deposition at room temperature and subsequent thermal crystallization. X-ray diffraction patterns revealed the films were grown epitaxially with the orientation relationship of (001)[100] C12A7 || (001)[100] YAG. For S12A7, pseudo-homoepitaxial growth was attained on the C12A7 epitaxial layer. Upon electron doping, metallic conduction was achieved in the C12A7 film and the S12A7/C12A7 double-layered films. Analyses of optical absorption spectra for the S12A7/C12A7 films provided the densities of free electrons in each layer separately. Hall measurements exhibited larger electron mobility in the S12A7/C12A7 film than those in C12A7 and S12A7 films, suggesting free electrons may be accumulated at the S12A7/C12A7 interface due presumably to a discontinuity of the cage conduction bands.
Reciprocal space maps around the 408 and the 709 diffractions show the films were grown epitaxially with the orientation relationship of (001)[100] 12SrO·7Al2O3 || (001)[100] 12CaO·7Al2O3 || (001)[100] Y3Al5O12.Figure optionsDownload as PowerPoint slide
Journal: Journal of Solid State Chemistry - Volume 183, Issue 2, February 2010, Pages 385–391