کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1331372 1500118 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium
چکیده انگلیسی

Fine-grained Ti-doped FeVSb half-Heusler alloys were synthesized by combining mechanical alloying and spark plasma sintering and their thermoelectric properties were investigated with an emphasis on the influences of Ti doping and phase purity. It was found that substituting V with Ti can change the electrical transport behavior from n-type to p-type due to one less valence electron of Ti than V, and the sample with nominal composition FeV0.8Ti0.4Sb exhibits the largest Seebeck coefficient and the maximum power factor. By optimizing the sintering temperature and applying annealing treatment, the power factor is significantly improved and the thermal conductivity is reduced simultaneously, resulting in a ZT value of 0.43 at 500 °C, which is relatively high as for p-type half-Heusler alloys containing earth-abundant elements.

Fine-grained Ti-doped FeVSb alloys were prepared by the MA-SPS method. The maximum ZT value reaches 0.43 at 500 °C, which is relatively high for p-type half-Heusler alloys.Figure optionsDownload as PowerPoint slideHighlights
► Ti-doped FeVSb half-Heusler alloys were synthesized by combining MA and SPS.
► Substituting V with Ti changes the electrical behavior from n-type to p-type.
► Thermoelectric properties are improved by optimizing sintering temperature.
► Thermoelectric properties are further improved by applying annealing treatment.
► A high ZT value of 0.43 is obtained at 500 °C for p-type Ti-doped FeVSb alloys.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 198, February 2013, Pages 125–130
نویسندگان
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