کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1331534 979007 2009 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure–composition sensitivity in “Metallic” Zintl phases: A study of Eu(Ga1−xTtx)2 (Tt=Si, Ge, 0≤x≤1)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Structure–composition sensitivity in “Metallic” Zintl phases: A study of Eu(Ga1−xTtx)2 (Tt=Si, Ge, 0≤x≤1)
چکیده انگلیسی

Two isoelectronic series, Eu(Ga1−xTtx)2 (Tt=Si, Ge, 0≤x≤1), have been synthesized and characterized by powder and single-crystal X-ray diffraction, physical property measurements, and electronic structure calculations. In Eu(Ga1−xSix)2, crystal structures vary from the KHg2-type to the AlB2-type, and, finally, the ThSi2-type structure as x increases. The hexagonal AlB2-type structure is identified for compositions 0.18(2)≤x<0.70(2) with Ga and Si atoms statistically distributed in the polyanionic 63 nets. As smaller Si atoms replace Ga atoms while the number of valence electrons increases, the lattice parameters, unit cell volumes, and Ga–Si distances in this phase region decrease significantly. Although aspects of X-ray diffraction results suggest puckering of the 63 nets for the Si-richest example of the AlB2-type Eu(Ga1−xSix)2, the complete experimental evidence remains inconclusive. On the other hand, in Eu(Ga1−xGex)2, six different structural types were observed as x varies. In addition to EuGa2 (KHg2-type; space group Imma) and EuGe2 (own structure type, space group P3¯m1), the ternary phases studied show four different structures: the AlB2-type for Ga-rich compositions; the YPtAs-type structure for EuGaGe; and two new structures, which are intergrowths of the YPtAs-type EuGaGe and EuGe2, for Ge-rich compositions. These two Ge-rich phases include: (1) Eu(Ga0.45(2)Ge0.55(2))2 containing two YPtAs-type motifs of EuGaGe plus one EuGe2 motif; and (2) Eu(Ga0.40(2)Ge0.60(2))2 containing one YPtAs-type motif alternating with a split site at x=23,y=13 and z=0.4798(2) with ca. 50% site occupancy by Ga and Ge along the c-axis. Magnetic susceptibilities of three Eu(Ga1−xGex)2 compounds display Curie–Weiss behavior above ca. 100 K, and show effective magnetic moments indicative of divalent Eu with a 4f7 electronic configuration, consistent with. X-ray absorption spectra (XAS). Density of states (DOS) and crystal orbital Hamilton population (COHP) analyses, based on first principles electronic structure calculations, rationalize the observed homogeneity ranges of the AlB2-type phases in both systems and the structural variations as a function of Tt content.

A study of Eu(Ga1−xSix)2 and Eu(Ga1−xGex)2 shows different compositional ranges for puckering of 63 nets and, for the germanides, two new commensurately modulated superstructures.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 182, Issue 9, September 2009, Pages 2430–2442
نویسندگان
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