کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1445382 | 1509584 | 2015 | 8 صفحه PDF | دانلود رایگان |
In this study, we demonstrated the control of crystal phase and structural quality of Au-catalyzed InAs nanowires grown on the GaAs {1 1 1}B substrates by tuning the V/III ratio in molecular beam epitaxy. It has been found that InAs nanowires can only be grown in a relatively narrow window of the V/III ratio. It is also demonstrated that the V/III ratio can be used to control the structural quality of wurtzite structured and zinc-blende structured InAs nanowires under low V/III ratios, and defect-free wurtzite structured and zinc-blende structured InAs nanowires were successfully achieved. This study provides an insight into the controlled growth of high-quality wurtzite structured and zinc-blende structured InAs nanowires through the V/III ratio engineering.
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Journal: Acta Materialia - Volume 92, 15 June 2015, Pages 25–32