کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1445621 | 1509595 | 2014 | 11 صفحه PDF | دانلود رایگان |
Continuous thin films of Pt on A-plane 112¯0 sapphire substrates were dewetted to characterize the morphological evolution and dewetting kinetics at 800 °C using an oxygen partial pressure of 10−20 atm. Hole growth was studied, focusing on partially dewetted samples. Four different low-index orientation relationships were found between the Pt and sapphire substrate by electron backscattered diffraction combined with transmission electron diffraction patterns. Abnormal grains adjacent to the holes with a small deviation from one of the low-index orientation relationships were observed. The difference in the heights of the abnormal grains adjacent to the holes (rim-height) is influenced by the initial position of the hole, and the existence of grains with a low-energy interface orientation relationship, and not only by diffusivity rates dictated by surface orientation as described in existing edge-retraction models. The existence of low-index orientation relationships is seen as the driving force for abnormal grain growth in the vicinity of the holes, and is a dominant factor in controlling the dewetting rate of thin metal films on oxide surfaces.
Journal: Acta Materialia - Volume 81, December 2014, Pages 304–314