Damage accumulation and recovery in C+-irradiated Ti3SiC2

The radiation damage response of Ti3SiC2 irradiated by 700 keV C ions has been investigated over a range of fluences and sample temperatures. The samples were analysed using a series of experimental techniques, including glancing-incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy and scanning electron microscopy. This material exhibits a high level of tolerance to damage, especially at high temperature. Irradiation at temperatures from room temperature to 270 °C results in decomposition to TiC; however, this is not observed at temperatures above 270 °C. A minimum in the observed damage level is evident for irradiation at a sample temperature of 350 °C. At higher temperatures the damage level increases, and results in material which is made up of damaged Ti3SiC2.