کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1447426 988644 2011 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Twinning dislocations on {1¯011} and {1¯013} planes in hexagonal close-packed crystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Twinning dislocations on {1¯011} and {1¯013} planes in hexagonal close-packed crystals
چکیده انگلیسی

The objective of this investigation was to identify the elementary twinning dislocations (TDs) for {1¯011} and {1¯013} twins by fully characterizing their structure for an Mg crystal. For both {1¯011} and {1¯013} twins, we conclude that the 2-layer TD, not the 4-layer TD, is the active TD in twinning. The 4-layer TD can be considered as the combination of two 2-layer TDs with opposite-sign screw components. Molecular statics simulations of the Peierls energy show why the TDs of both twinning modes (for c/a ratios > 1.5) are only activated when the c-axis experiences a compressive strain. The simulations predict that 2-layer TDs are more mobile than 4-layer TDs and that the mobility of these twinning dislocations depends strongly on dislocation character. Correspondingly, the influence of TDs involved in deformation twinning processes on deformation twins is discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 59, Issue 10, June 2011, Pages 3990–4001
نویسندگان
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