کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1447772 | 988654 | 2010 | 5 صفحه PDF | دانلود رایگان |
Small-sized indium tin oxide (ITO) nanowires were fabricated using the electron beam evaporation (EBE) technique at low temperature (∼150 °C) without adding any catalyst. The ITO nanowires have a typical diameter of around 10 nm and a length of more than 100 nm, with body-centered cubic crystal structures that grow along the 〈1 0 0〉 directions, as revealed by transmission electron microscopy. The growth mechanism of the branched ITO nanowires was found to be a vapor–solid process. The nanowire films show a broadband anti-reflection property due to the graded refraction index from the film surface to the substrate. Enhanced field emission properties with a low turn-on electric field and a high field enhancement factor were also observed in the ITO nanowires.
Journal: Acta Materialia - Volume 58, Issue 8, May 2010, Pages 3068–3072