کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1448709 988681 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor
چکیده انگلیسی

Silicon carbide whiskers exhibit growth predominantly in the 〈1 1 1〉 direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 56, Issue 11, June 2008, Pages 2450–2455
نویسندگان
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