Top-down prepared silicon nanocrystals and a conjugated polymer-based bulk heterojunction: Optoelectronic and photovoltaic applications

Blends consisting of doped silicon nanocrystals (Si-ncs) and two conjugated polymers (poly(3-hexylthiophene) (P3HT) and poly(methoxy ethylexyloxy phenylenevinilene) (MEH PPV)) with improved photostability were fabricated. We show that a top-down approach by electrochemical etching is suitable for preparing doped (boron and phosphorus) freestanding and surfactant-free Si-ncs. The doping of Si-ncs was confirmed by low temperature photoluminescence and electron spin resonance analysis. It is demonstrated that such Si-ncs can be successfully used for the fabrication of room temperature photoluminescent and photosensitive blends. We argue that the luminescence and transport properties of the blends are controlled by the Si-ncs properties and could be assigned to quantum confinement of excitons in nanocrystalites with an energy band gap of ∼2 eV. Furthermore, the blending of doped Si-ncs in both conjugated polymers led to the establishment of a bulk heterojunction between the Si-ncs and polymer. The difference in electron affinity and ionization potential between nanocrystals and polymer dissociated the excitons. Those blends showed increased carrier transport and photoconductivity under ambient conditions. It was found that introduction of less defective p-type doped Si-ncs significantly improved overall photostability of the blend. The Si-ncs non-toxicity and easy integration into well-established silicon technologies might bring considerable benefit for hybrid optoelectronic and photovoltaic device development.