کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1449589 | 988709 | 2007 | 6 صفحه PDF | دانلود رایگان |
Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth and crack-free films obtained by post-annealing at 700 °C for 30 min, and exhibit a dense columnar microstructure with a grain size of ∼0.85 μm. The sputtered PLZST films of nominal composition Pb0.97La0.02 (Zr0.60Sn0.30Ti0.10)O3 display a high saturation polarization of ∼70 μC cm−2, a low antiferroelectric-to-ferroelectric switching field (<100 kV cm−1), a reasonable dielectric constant and a low loss tangent. This combination of properties makes them attractive for microdevice applications.
Journal: Acta Materialia - Volume 55, Issue 11, June 2007, Pages 3923–3928