کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1449900 | 988717 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Raman scattering has been used to study lattice defects induced by non-stoichiometry in indium nitride films grown by plasma-assisted molecular beam epitaxy with different In/N ratios. A gap mode located at about 375 cm−1 is observed in InN films grown at low In/N ratios. This is in good agreement with the recursion method calculation for the In vacancy-induced vibration mode. In addition, a spatial correlation model has been used to estimate the lattice disorder in InN samples. The shortest correlation length is L = 5.9 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 55, Issue 1, January 2007, Pages 183–187
Journal: Acta Materialia - Volume 55, Issue 1, January 2007, Pages 183–187
نویسندگان
J.B. Wang, Z.F. Li, P.P. Chen, Wei Lu, T. Yao,