کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1449969 | 988719 | 2007 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interfacial phase formation during growth of ferromagnetic CdCr2Se4 on AlGaAs and ZnSe/AlGaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interfacial phase formation during growth of ferromagnetic CdCr2Se4 on AlGaAs and ZnSe/AlGaAs Interfacial phase formation during growth of ferromagnetic CdCr2Se4 on AlGaAs and ZnSe/AlGaAs](/preview/png/1449969.png)
چکیده انگلیسی
Microstructure and interfacial phase formation of CdCr2Se4 thin films deposited by molecular beam epitaxy on GaAs, Al0.1Ga0.9As and ZnSe/Al0.1Ga0.9As have been investigated with high-resolution transmission electron microscopy, fine-probe energy-dispersive spectroscopy and Z-contrast imaging. For CdCr2Se4 grown epitaxially on GaAs and/or Al0.1Ga0.9As, Cr tends to segregate to the interface forming either a layer enriched with Cr or trapezoidal-shaped Cr-rich precipitates. On ZnSe, CdCr2Se4 grows epitaxially at temperatures >300 °C, but when grown at 350 °C, the interface is quite rough or wavy. When the CdCr2Se4 is grown at 300 °C, the CdCr2Se4/ZnSe interface is more planar, but the CdCr2Se4 film is only epitaxial up to a thickness of about 5 nm, and then becomes polycrystalline as the thickness of the film increases. An interfacial phase, CdxZn1âxSe, forms at the CdCr2Se4/ZnSe interface, the thickness of which is determined by specific growth conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 55, Issue 14, August 2007, Pages 4625-4634
Journal: Acta Materialia - Volume 55, Issue 14, August 2007, Pages 4625-4634
نویسندگان
R. Goswami, G. Kioseoglou, A.T. Hanbicki, B.T. Jonker, G. Spanos,