Relation of crack-induced current shunting to transport current and n-value in DyBCO-coated superconductor

Transport current and n-value of DyBCO-coated conductor pulled in tension were measured experimentally and their relation to crack-induced current shunting was analyzed with the partial crack-current shunting model. The following features were revealed. The shunting current increases with increasing transport current and with increasing crack size. At low voltage where shunting current is low, the transport current of cracked sample normalized with respect to the transport current in non-cracked state is described with the modified ratio of non-cracked area to overall cross-sectional area of superconducting layer. At high voltage where the shunting current is high, the normalized transport current becomes higher than the modified ratio of non-cracked area. The increase in shunting current with transport current (and voltage) leads to a decrease in n-value at high current (voltage). This phenomenon is enhanced by crack extension.

► Crack-induced current shunting in coated conductor.
► Shunting current is enhanced by crack evolution.
► It increases with increasing voltage, leading to a decrease in n-value at high voltage.
► Crack evolution- and voltage-dependence of transport current is described by modeling analysis.