کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1508098 993951 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical control of low frequency noise behavior in cryogenic GaAs junction field effect transistor
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Optical control of low frequency noise behavior in cryogenic GaAs junction field effect transistor
چکیده انگلیسی
We demonstrated optical control of low frequency noise in n-type GaAs junction field effect transistors (JFETs) at cryogenic temperature. At 4.2 K, a 6 dB decrease and a 10 dB increase in noise at 1 Hz were observed when the JFET (band gap: 1.51 eV) was illuminated by light with wavelengths of 1650 and 1550 nm, respectively, for a drain voltage of 0.5 V and drain current of 0.25 μA. On the other hand, the wavelength with the noise reduction effect decreased to 1550 nm at 30 K. These results mean the trap charges at an energy level of approximately 0.75 ± 0.1 eV affect the carrier tunnel probability and the behavior of the low frequency noise.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Cryogenics - Volume 49, Issue 11, November 2009, Pages 626-629
نویسندگان
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