کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1508247 993960 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Critical currents density and current loops range in MgB2 thin layers obtained by the technique of ions implantation followed by pulsed plasma transient annealing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Critical currents density and current loops range in MgB2 thin layers obtained by the technique of ions implantation followed by pulsed plasma transient annealing
چکیده انگلیسی

We report on the measurements of transport and magnetic properties of MgB2 thin films obtained using ion implantation technique followed by irradiation with high intensity pulsed plasma beams. To get detailed information about the process of current percolation in a superconducting phase, about current transport and size of the current loop, we used the method of reverse leg of magnetisation loop. On the basis of this method we have found that the technique of implantation allowed one to obtain a continuous layer of MgB2 superconductor characterized by the critical current density of Jc = 1.25 × 105 A/cm2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Cryogenics - Volume 47, Issue 4, April 2007, Pages 267–271
نویسندگان
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