Ge-on-GaAs film resistance thermometers for cryogenic applications

Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermometers based on Ge-on-GaAs films. The thin film devices were produced using standard semiconductor processing techniques and provide high device sensitivity within the range 0.03–500 K. The construction and characteristics of the sensors are presented together with a discussion of their sensitivities to magnetic fields and ionising radiation.