A novel integrated method realizing iteratively optimized modeling for proximity field patterning nanolithography

Processing methods used in photonics and nanotechnology have many limitations hindering the ability to realize devices and restricting the actual number of applications. An ideal processing method should require low-cost equipment, be able to produce very fine details, and be scalable to process large area specimens in an acceptable amount of time. Proximity field nanopatterning (PnP) is a lithography method possessing these features. By using interference patterns produced by a two-dimensional phase mask, the technique is able to generate a submicron detailed exposure on a millimeter-size slab of light sensitive photopolymer, which is then developed like a photographic plate to reveal three-dimensional interference patterns from the phase mask. While it is possible to use computer aided simulations to obtain the interference patterns produced by a mask with a certain pattern, the inverse problem of producing a mask for a desired interference pattern cannot be solved in the same way due to the intricacies of light interactions involved in producing the final interference pattern. An alternative method is to iteratively optimize the phase mask so that the interference patterns obtained converge to the desired pattern. The method is elaborated in this article.