Cross-shaped metal–semiconductor–metal plasmonic crystal for terahertz modulator

The transmission and tuning properties of a cross-shaped plasmonic crystal based on periodic metal–semiconductor–metal (MSM) structures have been investigated in the terahertz (THz) regime. According to the mode analysis, we find that the different resonance modes in the plasmonic crystal show the different changes when this device is actively controlled by the carrier injection of the MSM structures. The longitudinal modes disappear, while the horizontal mode moves to a higher frequency. The former leads to an intensity modulation at 0.5 THz and 1.1 THz when the groove depth h = 60 μm, and the later leads to a band blue-shift from 1.325 THz to 1.38 THz. These results will be applied to THz modulation and tunable filtering.

► Introduce the semiconductor into structured plasmonics in the THz regime.
► Investigate the dependence of geometric structures on the different resonance modes.
► A novel modulation mechanism for the different modulation behaviors of resonance modes was proposed.
► Realize a multi-band high sensitivity modulator in the frequency range of higher than 1 THz.