کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1543228 | 997477 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical characteristics of one-dimensional photonic crystals composed of high-aspect-ratio Si walls fabricated on V-grooved wafer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We demonstrate optical properties of one-dimensional photonic crystals (PC), which are fabricated using high-aspect-ratio etching on a V-grooved silicon wafer. The measured transmission spectrum has an obvious band gap; the suppression is over 30 dB. The quite small insertion loss of 1.9 dB is achieved by induced coupled plasma (ICP) cryogenic etching and direct coupling to the optical fiber aligned in the V-groove. We also successfully observed peaks originating from a localized cavity mode. Such a microcavity enables control of the light, which qualifies photonic crystal as a fundamental structure of optical functional devices. These results lead to achievement of integrated Si-based photonic circuits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Photonics and Nanostructures - Fundamentals and Applications - Volume 4, Issue 1, February 2006, Pages 30–34
Journal: Photonics and Nanostructures - Fundamentals and Applications - Volume 4, Issue 1, February 2006, Pages 30–34
نویسندگان
Kazuhiko Hosomi, Toshihiko Fukamachi, Hiroji Yamada, Toshio Katsuyama, Yasuhiko Arakawa,