A novel high-performance high-frequency SOI MESFET by the damped electric field

• We introduce a novel SOI-MESFET using the damped electric field.
• The structure is geometrically symmetric and compatible with fabrication processes.
• It has two additional oxide regions under the side gates.
• Device performance is investigated by two-dimensional and two-carrier simulation.
• The structure has higher performances in comparison with the conventional one.

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate–drain and gate–source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

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