Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1−xN/GaN heterostructures

• In mole fraction fluctuation scattering is calculated in InAlN/GaN heterostructure.
• We characterize the In mole fraction fluctuation with δxδx and ΛΛ.
• The tendencies of mobility vs x   are different for different value of ΛΛ.

In an InxAl1−xN/GaN heterostructure, we have studied the mobility limited by the In mole fraction fluctuation scattering. The In mole fraction fluctuation characterizes the quality of the InxAl1−xN material with two parameters, one is the mole fraction fluctuation δxδx and the other is its lateral s ΛΛ. Similar to a roughness scattering, for a fixed mole fraction x  , the mobility limited by the In mole fraction fluctuation initially decreases with ΛΛ increasing, reaches a minimum at a certain value of ΛΛ and then increases.