Tuning of the electronic and optical properties of single-layer indium nitride by strain and stress

• The electronic results showed that in these ranges of biaxial stress and strain, indium nitride monolayer remains direct type band gap semiconductor.
• The value of energy band gap is reduced differently and can be controlled by exerting stress and strain.
• Optical conductivity spectrum illustrates that the optical band gap in x direction is corresponding with electronic band gap in energy band structure.

Using first principles calculations, electronic and optical properties of indium nitride graphene-like structure have been studied under various stress and strain values. The results exhibit that this compound in the range of ±6 applied biaxial strain remains a direct band gap semiconductor. Also, exerting stress and strain reduces the energy band gap of the considered materials. The optical calculations illustrate that applying stress and strain on system results in blue and red shift in optical spectra. All obtained results presented that we can tune the optoelectronic properties of indium nitride by applying stress and strain.

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